insulated gate bipolar transistor (ultrafast igbt), 75 a GB75DA120UP vishay semiconductors document number: 93011 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? npt generation v igbt technology ? square rbsoa ?hexfred ? low q rr , low switching energy ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, we lding, induction heating ? easy to assemble and parallel ? direct mounting on heatsink ? plug-in compatible with other sot-227 packages ? low emi, requires less snubbing product summary v ces 1200 v i c dc 75 a at 95 c v ce(on) typical at 75 a, 25 c 3.3 v sot-227 absolute maximum ratings parameter s ymbol te s t condition s max. unit s collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 131 a t c = 80 c 89 pulsed collector current i cm 200 clamped inductive load current i lm 200 diode continuous forward current i f t c = 25 c 59 t c = 80 c 39 gate to emitter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 658 w t c = 80 c 369 power dissipation, diode p d t c = 25 c 240 t c = 80 c 135 isolation voltage v isol any terminal to case, t = 1 min 2500 v
GB75DA120UP vishay semiconductors insulated gate bipolar transistor (ultrafast igbt), 75 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93011 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s collector to em itter breakdown voltage v br(ces) v ge = 0 v, i c = 250 a 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 75 a - 3.3 3.8 v ge = 15 v, i c = 75 a, t j = 125 c - 3.6 3.9 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4 5 6 temperature coefficient of threshold voltage v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 12 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 1200 v - 3 250 a v ge = 0 v, v ce = 1200 v, t j = 150 c - 4 20 ma forward voltage drop v fm i c = 75 a, v ge = 0 v - 3.4 5.0 v i c = 75 a, v ge = 0 v, t j = 125 c - 3.3 5.2 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s total gate charge (turn-on) q g i c = 50 a, v cc = 600 v, v ge = 15 v - 690 - nc gate to emitter charge (turn-on) q ge -65- gate to collector charge (turn-on) q gc - 250 - turn-on switching loss e on i c = 75 a, v cc = 600 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -1.53- mj turn-off switching loss e off -1.76- total switching loss e tot -3.29- turn-on switching loss e on i c = 75 a, v cc = 600 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -2.49- turn-off switching loss e off -3.45- total switching loss e tot -5.94- turn-on delay time t d(on) - 281 - ns rise time t r -45- turn-off delay time t d(off) - 300 - fall time t f - 126 - reverse bias safe operating area rbsoa t j = 150 c, i c = 200 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 900 v, v p = 1200 v, l = 500 h fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 142 210 ns diode peak reverse current i rr -1316a diode recovery charge q rr - 923 1680 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 202 260 ns diode peak reverse current i rr -1822a diode recovery charge q rr - 1818 2860 nc
GB75DA120UP insulated gate bipolar transistor (ultrafast igbt), 75 a vishay semiconductors document number: 93011 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - maximum dc ig bt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - maximum dc forward current vs. case temperature thermal and mechanical specifications parameter s ymbol min. typ. max. unit s maximum junction and storage temperature range t j , t stg - 40 - 150 c junction to case igbt r thjc - - 0.19 c/w diode - - 0.52 case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g allowable case temperature (c) i c - continuous collector current (a) 0 20 40 60 80 100 120 140 0 160 100 120 140 20 40 60 80 i c (a) v ce (v) 10 100 1000 10 000 1 1000 10 100 i c (a) v ce (v) 0246 135 0 200 50 100 150 t j = 125 c t j = 25 c allowable case temperature (c) i f - continuous forward current (a) 0 10203040506070 0 160 100 120 140 20 40 60 80
GB75DA120UP vishay semiconductors insulated gate bipolar transistor (ultrafast igbt), 75 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93011 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 5 - typical diode forward characteristics fig. 6 - typical igbt zero gate voltage collector current fig. 7 - typical igbt threshold voltage fig. 8 - typical igbt coll ector to emitter voltage vs. junction temperature, v ge = 15 v fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v i f (a) v fm (v) 01 3 245 0 200 50 150 100 t j = 125 c t j = 25 c i ces (ma) v ces (v) 0 200 400 600 800 1000 1200 0.0001 10 0.01 1 0.001 0.1 t j = 125 c t j = 25 c v geth (v) i c (ma) 0.0002 0.0004 0.0006 0.0008 0.001 3.0 6.0 4.0 4.5 5.0 5.5 3.5 t j = 125 c t j = 25 c v ce (v) t j (c) 25 50 75 125 100 150 2.0 4.5 3.0 3.5 4.0 2.5 100 a 75 a 27 a energy (mj) i c (a) 10 20 30 50 60 70 40 80 0 4.0 1.5 3.0 2.5 2.0 3.5 1.0 0.5 e on e off switching time (s) i c (a) 020 60 40 80 10 1000 100 t d(off) t d(on) t f t r
GB75DA120UP insulated gate bipolar transistor (ultrafast igbt), 75 a vishay semiconductors document number: 93011 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 75 a, l = 500 h, v cc = 600 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 15 - maximum thermal impedance z thjc characteristics (igbt) energy (mj) r g ( ) 0 1020304050 0 14 6 10 8 12 4 2 e on e off switching time (s) r g ( ) 02030 10 40 50 10 10 000 1000 100 t d(on) t d(off) t f t r t rr (ns) di f /dt (a/s) 100 1000 70 250 110 150 190 210 230 90 130 170 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 40 10 20 30 35 5 15 25 t j = 125 c t j = 25 c 0.0001 0.01 0.1 0.001 1 0.00001 0.0001 0.001 0.01 0.1 rectangular pulse duration (t 1 ) z thjc - thermal impedance junction to case (c/w) 1 single p u lse (thermal response) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
GB75DA120UP vishay semiconductors insulated gate bipolar transistor (ultrafast igbt), 75 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93011 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 16 - maximum thermal impedance z thjc characteristics (diode) fig. 17a - clamped inductive load test circuit fig. 17b - pulsed collector current test circuit fig. 18a - switching loss test circuit 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 rectangular pulse duration (t 1 ) z thjc - thermal impedance junction to case (c/w) 1 single p u lse (thermal response) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: d u e to the 50 v power s u pply, p u lse width and ind u ctor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + -
GB75DA120UP insulated gate bipolar transistor (ultrafast igbt), 75 a vishay semiconductors document number: 93011 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 18b - switching loss waveforms test circuit ordering information table t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (75 = 75 a) 4 - circuit configuration (d = single switch with antiparallel diode) 5 - package indicator (a = sot-227) 6 - voltage rating (120 = 1200 v) 8 - totally lead (pb)-free 7 - speed/type (u = ultrafast igbt) device code 5 13 24 678 g b 75 d a 120 u p
GB75DA120UP vishay semiconductors insulated gate bipolar transistor (ultrafast igbt), 75 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93011 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 circuit configuration link s to related document s dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 3 (c) 2 (g) 1, 4 (e)
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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